High-Efficiency 250-320 GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate asymmetric recess, were adopted, the length of was optimized to simultaneously obtain high efficiency. A common-source PA MMIC based on MOS-HEMTs fabricated, interstage designed maximize S21 per unit stage in resulting record-high power-added efficiency wide bandwidth.